Semikron SKM200GB12T4
  Semikron SKM200GB12T4

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Semikron SKM200GB12T4

Manufacturer

Semikron

Country

Germany

Part number

SKM200GB12T4

Description

IGBT halfbridge - trench

Stock availability:

On request

Price: On request

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Specifications SKM200GB12T4

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Features SKM200GB12T4

Product Attribute Attribute Value Search
Channel Type N
Collector Current 310 A
Collector to Emitter Shorted Voltage 1200 V
Collector to Emitter Voltage 1200 V
Configuration Dual
Continuous Collector Current 313 A
Dimensions 106.4 x 61.4 x 30.5 mm
Energy Rating 20.2 mJ
Gate to Emitter Voltage 20 V
Height 1.201" (30.5mm)
Length 4.188" (106.4mm)
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
Mounting Type Screw
Number of Pins 7
Package Type Semitrans3
Resistance, Thermal, Junction to Case 0.038 K/W
Series IGBT Series
Temperature Operating Range -40 to +175 °C
Type Trench
Width 2.417" (61.4mm)
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